Predicting failure parameters of semiconductor devices subjected to stress conditions
US11493548B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2021 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Jul 23, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/275
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for predicting failure parameters of semiconductor devices can include receiving a set of data that includes (i) characteristics of a sample semiconductor device, and (ii) parameters characterizing a stress condition. The method further includes extracting a plurality of feature values from the set of data and inputting the plurality of feature values into a trained model executing on the one or more processors, wherein the trained model is configured according to an artificial intelligence (AI) algorithm based on a previous plurality of feature values, and wherein the trained model is operable to output a failure prediction based on the plurality of feature values. Further, the method includes generating, via the trained model, a predicted failure parameter of the sample semiconductor device due to the stress condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.