Magnetic sensor with dual TMR films and the method of making the same
US11493573B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2019 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Nov 15, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/0023
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.