Method for detecting environmental parameter in semiconductor fabrication facility
US11493909B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2021 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Apr 16, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor fabrication facility (FAB) is provided. The FAB includes a number of processing tools. The FAB also includes a sampling station connected to the processing tools. In addition, the FAB includes a detection vehicle detachably connected to the sampling station and comprising a metrology module. When the detection vehicle is connected to the sampling station, a gas sample is delivered from one of the processing tools to the metrology module of the detection vehicle via the sampling station for performing a measurement of a parameter in related to the gas sample by the metrology module. In addition, the FAB includes a control system configured to issue a warning when the parameter in related to the gas sample from the one of the processing tools is out of a range of acceptable values associated with the one of the processing tools.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.