Non-volatile memory device and operating method
US11495291B2 · kind B2 · utility
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8References
18Claims
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Key dates
| Filing date | Dec 2, 2020 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Dec 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14511
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An operating method for a non-volatile memory device includes; performing a read operation on adjacent memory cells connected to an adjacent word line proximate to a target word line to determine adjacent data, classifying target memory cells connected to the target word line into groups according to the adjacent data, setting a read voltage level for each of the groups by searching for a read voltage level for target memory cells in at least one of the groups, and performing a read operation on target memory cells using the read voltage level set for each of the groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.