Vapor deposition precursor having excellent thermal stability and reactivity and preparing method therefor
US11495453B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Apr 27, 2018 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Feb 2, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.