Patent · US Active

Power semiconductor module with integrated surge arrester

US11495551B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 9, 2020
Grant dateNov 8, 2022
Priority date
Expiry dateJul 9, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L23/473
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A power semiconductor module includes a plurality of power semiconductor chips. A housing accommodates the power semiconductor chips. A first module electrode on a first side of the housing electrically is connected to a first chip electrode of the power semiconductor chips. A second module electrode on a second side of the housing electrically is connected to a second chip electrode. A surge arrester arrangement with a surge arrester is accommodated in the housing such that a first electrode of the surge arrester arrangement is provided at the first side of the housing and a second electrode of the surge arrester arrangement is provided at the second side of the housing. The power semiconductor chips are arranged in an annular region in the housing and the surge arrester arrangement is arranged within the annular region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.