Display substrate and manufacturing method thereof, display device

US11495623B2 · kind B2 · utility

Assignee

• BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. · CN

Inventors

• Yanan Niu · Beijing, CN
• Kuanjun Peng · Beijing, CN
• Jiushi Wang · Beijing, CN
• Zhanfeng Cao · Beijing, CN
• Feng Zhang · 南丰镇, CN
• Qi Yao · Nanhu, CN
• Wusheng Li · Shangqiu City, CN
• Feng Guan · Beijing, CN
• Lei Chen · Chengdu, CN
• Jintao Peng · Beijing, CN
• Tingting Zhou · Beijing, CN

Key dates

• Filing date: Dec 19, 2019
• Grant date: Nov 8, 2022
• Expiry date: Nov 11, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/471

Abstract

The present disclosure provides a display substrate and a manufacturing method thereof, and a display device. In the display substrate of the present disclosure, a first transistor comprises a first gate electrode, a first electrode, a second electrode, and a first active layer; and a second transistor comprises a second gate electrode, a third electrode, a fourth electrode, and a second active layers, wherein the first active layer comprises a silicon material, the second active layer comprises an oxide semiconductor material, and wherein the third electrode and the first gate electrode are disposed in the same layer, and the fourth electrode and the first electrode, the second electrodes are disposed in the same layer.