Photoelectronic device, flat panel display using the same, and fabrication method of photoelectronic device
US11495767B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Dec 22, 2020 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Jun 21, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.