Gate drive device, gate drive method, power semiconductor module, and electric power conversion device
US11496041B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2021 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | May 20, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention provides a gate drive device, a gate drive method, a power semiconductor module, and an electric power conversion device capable of reducing a negative gate surge voltage. The gate drive device drives a semiconductor device constituting an arm in an electric power conversion device. Before a turn-off start of a drive arm, in a counter arm, a voltage between one main terminal of the semiconductor device and a gate terminal of the semiconductor device is charged to a voltage value that is larger, in a positive direction, than a negative voltage of a negative gate power supply and smaller than a gate threshold voltage of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.