Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane

US11499014B2 · kind B2 · utility

Assignees

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR
• American Air Liquide, Inc. · US

Inventors

• Yumin Liu · Fussa, JP
• Jean-Marc Girard · Versailles, FR
• Peng Zhang · Montvale, US
• Fan QIN · Bear, US
• Gennadiy Itov · Flemington, US
• Fabrizio Marchegiani · Wilmington, US
• Thomas J. LARRABEE · Middletown, US

Key dates

• Filing date: Dec 31, 2019
• Grant date: Nov 15, 2022
• Expiry date: Feb 8, 2040

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B05D2518/12
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.