Magnetic sensing devices based on interlayer exchange-coupled magnetic thin films
US11500042B2 · kind B2 · utility
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16References
10Claims
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Key dates
| Filing date | Mar 1, 2021 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | Mar 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetic sensing device includes a non-magnetic layer serving as a spacer and two magnetic layers that sandwich the spacer, and two oxide layers that sandwich the trilayer structure including the two magnetic layers and the spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.