Patent · US Active

Waveguide photodetector

US11500150B2 · kind B2 · utility

0Cited by
7References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 11, 2021
Grant dateNov 15, 2022
Priority date
Expiry dateFeb 11, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2006/12126
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Provided is a waveguide photodetector including a semiconductor substrate, a first optical waveguide and a second optical waveguide, which are sequentially laminated on the semiconductor substrate, in which each of the first optical waveguide and the second optical waveguide includes a first portion and a second portion, and the first portion extends from the second portion in a first direction parallel to a top surface of the semiconductor substrate, a refractive index matching layer disposed on the second portion of the second optical waveguide, a clad layer disposed on the refractive index matching layer, and an absorber disposed between the refractive index matching layer and the clad layer. Here, the second optical waveguide has a first conductive-type, the clad layer has a second conductive-type opposite to the first conductive-type, and the refractive index matching layer includes a first semiconductor layer that is an intrinsic semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.