ZNS parity swapping to DRAM
US11500727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2020 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | Feb 10, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7208
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relates to methods of operating storage devices. The storage device comprises a controller comprising first random access memory (RAM1), second random access memory (RAM2), and a storage unit divided into a plurality of zones. A first command to write data to a first zone is received, first XOR data is generated in the RAM1, and the data of the first command is written to the first zone. When a second command to write data to a second zone is received, the generated first XOR data is copied from the RAM1 to the RAM2, and second XOR data for the second zone is copied from the RAM2 to the RAM1. The second XOR data is updated with the second command, and the data of the second command is written to the second zone. The updated second XOR data is copied from the RAM1 to the RAM2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.