Dual relationship-based hash structure for non-volatile memory technology
US11500815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2020 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | May 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04L9/0894
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, apparatus, and processor-readable storage media for implementing dual relationship-based hash structures for non-volatile memory technology are provided herein. An example computer-implemented method includes generating a hash storage structure by: creating multiple layers of storage components, wherein a first layers comprise a first number of storage components and at least a second layer comprises at least a second number of storage components less than the first number of storage components; configuring the at least a second layer to share at least a portion of the storage components therein with at least a portion of the storage components in the first layer; partitioning each of the storage components in each of the multiple layers into multiple portions; configuring a respective status value space for each of the multiple portions of each of the storage components in the multiple layers; and implementing the hash storage structure in at least one storage system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.