Hafnium oxide-based ferroelectric field effect transistor and manufacturing method thereof

US11502083B2 · kind B2 · utility

Assignee

• XIANGTAN UNIVERSITY · CN

Inventors

• Min-Nan Liao · Hengshan, TW
• Binjian Zeng · Xiangtan City, CN
• Yichun Zhou · Hunan, CN
• Jiajia Liao · Tuji, CN
• Qiangxiang Peng · Xiangtan City, CN
• Yanwei Huan · Xiangtan City, CN

Key dates

• Filing date: Sep 25, 2021
• Grant date: Nov 15, 2022
• Expiry date: Sep 25, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/689

Abstract

A hafnium oxide-based ferroelectric field effect transistor includes a substrate, an isolation region arranged around the substrate; a gate structure including a buffer layer, a floating gate electrode, a hafnium oxide-based ferroelectric film layer, a control gate electrode and a film electrode layer which are sequentially stacked from bottom to top at a middle part of an upper surface of the substrate, a side wall arranged outside the gate structure, a source region and a drain region arranged oppositely at two sides of the gate structure and are formed by extending from an inner side of the isolation region to the middle part of the substrate, a first metal silicide layer formed by extending from the inner side of the isolation region to the side wall, and a second metal silicide layer arranged on an upper surface of the gate structure.