Semiconductor body and method for producing a semiconductor body

US11502224B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Ingrid Koslow · Regensburg, DE
• Massimo Drago · Riedenburg, DE
• Joachim Hertkorn · Neukirchen, DE
• Alexander Frey · Lappersdorf, DE

Key dates

• Filing date: Jun 14, 2018
• Grant date: Nov 15, 2022
• Expiry date: Jul 12, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/811

Abstract

A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.