Thermoelectric material and thermoelectric module

US11502235B2 · kind B2 · utility

Assignees

• HAKUSAN CORPORATION · JP
• JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · JP
• ISHIKAWA PREFECTURE · JP

Inventors

• Shigeyuki Tsurumi · Ishikawa, JP
• Kazumasa Yasuda · Sunnyvale, US
• Takeshi Sotome · Ishikawa, JP
• Mikio Koyano · Ishikawa, JP
• Takeshi Toyoda · Ishikawa, JP
• Akinari Matoba · Ishikawa, JP
• Toshiharu Minamikawa · Ishikawa, JP

Key dates

• Filing date: Aug 10, 2018
• Grant date: Nov 15, 2022
• Expiry date: Aug 10, 2038

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01B33/02
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A thermoelectric material includes a parent phase in which an MgSiSn alloy is a main component, a void formed in the parent phase, and a silicon layer that is formed on at least a wall surface of the void and that includes silicon as a main component. The thermoelectric material further includes MgO in an amount of 1.0 wt. % or more and 20.0 wt. % or less. The silicon layer includes amorphous Si, or amorphous Si and nanosized Si crystals, and the parent phase includes a region in which the composition ratio of the Si of the chemical composition of the MgSiSn alloy is higher than in the other regions and a region in which the composition ratio of the Sn of the chemical composition of the MgSiSn alloy is higher than in the other regions. With these configurations, the thermoelectric material realizes both lower thermal conductivity and lower electrical resistivity.