Patent · US Active

Silicon nitride waveguide based integrated photonics optical gyroscope chip with novel materials for phase shifter

US11506494B2 · kind B2 · utility

0Cited by
4References
18Claims
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Key dates

Filing dateJan 14, 2022
Grant dateNov 22, 2022
Priority date
Expiry dateJan 14, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01C19/661
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An integrated photonics optical gyroscope fabricated on a silicon nitride (SiN) waveguide platform comprises a first silicon nitride (SiN) waveguide layer that constitute a rotation sensing element; and, a second SiN waveguide layer with additional silicon nitride (SiN) waveguide-based optical components that constitute a front-end chip to launch light into and receive light from the rotation sensing element. The two SiN waveguide layers can be stacked together to have a multi-layer configuration vertically coupled with each other. External elements (e.g., laser, detectors, phase shifter) may be made of different material platform than SiN and can be hybridly integrated to the SiN waveguide platform. The phase shifters can be made of aluminum nitride (AlN) or strontium bismuth titanate (SBT).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.