Method using silicon-containing underlayers
US11506979B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Dec 7, 2017 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Dec 7, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F220/303
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.