Patent · US Active

Method using silicon-containing underlayers

US11506979B2 · kind B2 · utility

0Cited by
5References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 7, 2017
Grant dateNov 22, 2022
Priority date
Expiry dateDec 7, 2037

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC08F220/303
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.