Semiconductor device and power converter
US11508638B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 17, 2018 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Aug 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/0603
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate has a first surface and a second surface that includes an inner region and an outer region. The semiconductor substrate includes a drift layer of a first conductivity type and a terminal well region of a second conductivity type. The terminal well region includes a portion that extends from between the inner region and the outer region toward the outer region. A first electrode is on the first surface. A second electrode is on at least part of the inner region and electrically connected to the terminal well region, and has its edge located on a boundary between the inner region and the outer region. A peripheral structure is provided on part of the outer region, away from the second electrode. A surface protective film covers the edge of the second electrode and at least part of the outer region and has the peripheral structure engaged therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.