Semiconductor device
US11508718B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Dec 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/813
Abstract
A semiconductor device includes first well regions in a substrate and spaced apart from each other, a connection doped region between the first well regions, and a first interconnection line electrically connected to the connection doped region through a first contact. The first well regions and the connection doped region include impurities of a first conductivity type, and a concentration of the impurities in the connection doped region is higher than that in the first well regions. The first well regions extend into the substrate to a depth larger than that of the connection doped region. A first portion of the connection doped region is disposed in the first well regions and a second portion of the connection doped region contacts the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.