Power semiconductor device with a temperature sensor
US11508723B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 13, 2018 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Jul 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
We describe herein a high voltage semiconductor device comprising a power semiconductor device portion (100) and a temperature sensing device portion (185). The temperature sensing device portion comprises: an anode region (140), a cathode region (150), a body region (160) in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region (165) in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.