Insulated gate bipolar transistor module, conductor installing structure therefor, and inverter
US11508727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Dec 9, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/56
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An IGBT module, a conductor installing structure for the IGBT module and an inverter are provided. The conductor installing structure for the IGBT module includes a substrate, a conductor and an insulation sleeve sleeved on the conductor and insulatedly isolating the conductor from the substrate. In the conductor installing structure for the IGBT module according to the present disclosure, by using the insulation sleeve sleeved on the conductor to insulatedly isolating the conductor from the substrate, the comparative tracking index of the IGBT module is improved, thereby improving the creepage distance of the IGBT module. In addition, compared with conventional technologies of spraying insulation varnish or insulation paste, the insulating property of the insulation sleeve can be better detected and guaranteed, and the bounding between the insulation sleeve and the substrate can be better enhanced, improving the insulation reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.