Active-matrix substrate and display device
US11508760B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2018 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Aug 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/851
Abstract
An active matrix substrate includes a plurality of first contact holes extending through an inorganic insulating film, a first protection layer that is a silicon nitride film, and a second protection layer, a plurality of second contact holes extending through the inorganic insulating film and the second protection layer, a first transistor, and a second transistor. A channel region of the second transistor does not overlap the first protection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.