Silicon carbide semiconductor device and power converter
US11508840B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | May 28, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Dec 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/105
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In SiC-MOSFETs including Schottky diodes, passage of a bipolar current to a second well region formed in a terminal portion sometimes reduces a breakdown voltage. In a SiC-MOSFET including Schottky diodes according to the present invention, the second well region formed in the terminal portion has a non-ohmic connection to a source electrode, and a field limiting layer lower in impurity concentration than the second well region is formed in a surface layer area of the second well region which is a region facing a gate electrode through a gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.