Semiconductor component and method for singulating a semiconductor component having a pn junction

US11508863B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Elmar Lohmüller · Freiburg (Elbe), DE
• Ralf Preu · Glückstadt, DE
• Puzant Baliozian · Freiburg (Elbe), DE
• Tobias Fellmeth · Freiburg (Elbe), DE
• Nico Wöhrle · Freiburg (Elbe), DE
• Pierre Saint-Cast · Freiburg (Elbe), DE
• Florian Clement · Freiburg (Elbe), DE
• Andreas Brand · Wettingen, CH

Key dates

• Filing date: Sep 24, 2019
• Grant date: Nov 22, 2022
• Expiry date: Sep 24, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A a semiconductor component (1a, 1b) having a front side and an opposite rear side and also side surfaces, and also at least one emitter (2a, 2b) and at least one base (3a, 3b), wherein a pn junction (4a, 4b) is formed between emitter (2a, 2b) and base (3a, 3b) and the emitter (2a, 2b) extends parallel to the front and/or rear side. At least one side surface is a passivated separating surface (T), at which a separating surface passivation layer (6a, 6b) is arranged, which has stationary charges having a surface charge density at the separating surface (T) with a magnitude of greater than or equal to 1012 cm-2. A method for singulating a semiconductor component (1a, 1b) having a pn junction is also provided.