Lateral interband type II engineered (LITE) detector
US11508869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Sep 26, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/288
Abstract
A lateral interband Type II engineered (LITE) detector is provided. LITE detectors use engineered heterostructures to spatially separate electrons and holes into separate layers. The device may have two configurations, a positive intrinsic (PIN) configuration and a BJT (Bipolar junction transistor) configuration. The PIN configuration may have a wide bandgap (WBG) layer that transports the holes above a narrow bandgap (NBG) absorber layer that absorbs the target radiation and transports the electrons. The BJT configuration may have a WBG layer operating as a BJT above an NBG layer. In both configurations, the LITE design uses a Type II staggered offset between the NBG layers and the WBG layers that provides a built-in field for the holes to drift from an absorber region to a transporter region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.