Red light emitting diode and manufacturing method thereof
US11508877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Jul 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer. Furthermore, a manufacturing method of the red light emitting diode is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.