Patent · US Active

Quantum dot LED, manufacturing method thereof and display device

US11508882B2 · kind B2 · utility

0Cited by

1References

15Claims

0Family size

Assignee

Hisense Visual Technology Co., Ltd. · CN

Inventors

Fulin Li · Shandong, CN
Zhicheng Song · Qingdao, CN

Key dates

Filing date	Nov 4, 2019
Grant date	Nov 22, 2022
Priority date	—
Expiry date	Nov 27, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/882
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed in the present application are a quantum dot LED, a manufacturing method thereof, and a display device, belonging to the technical field of LED light sources. The quantum dot LED includes an LED support, an LED chip, a filling layer, and a quantum dot layer, where the LED support comprises a chamber; the LED chip is arranged on a bottom surface of the chamber; the filling layer covers the bottom surface of the chamber and the LED chip, and is engaged with walls of the chamber; and the quantum dot layer is arranged at an opening on a top surface of the chamber, a light incident side of the quantum dot layer abuts against a surface of the filling layer away from the bottom surface of the chamber, and a shortest distance h between the LED chip and the quantum dot layer meets h≥0.03 mm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.