Patent · US Active

Semiconductor devices

US11508923B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 16, 2020
Grant dateNov 22, 2022
Priority date—
Expiry dateDec 16, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K71/231
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A technique, comprising: forming in situ on a support substrate: a first metal layer; a light-absorbing layer after the first metal layer; a conductor pattern after the light-absorbing layer; and a semiconductor layer after the conductor pattern; patterning the semiconductor layer using a resist mask to form a semiconductor pattern defining one or more semiconductor channels of one or more semiconductor devices; and patterning the light-absorbing layer using the resist mask and the conductor pattern, so as to selectively retain the light-absorbing layer in regions that are occupied by at least one of the resist mask and the conductor pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.