Silicon nitride substrate and silicon nitride circuit board
US11512023B2 · kind B2 · utility
1Cited by
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17Claims
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Key dates
| Filing date | Dec 11, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Dec 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10166
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.