Silicon photonics device for LIDAR sensor and method for fabrication
US11513289B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2021 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Nov 24, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12107
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.