Magnetic domain wall drift for an artificial leaky integrate-and-fire neuron
US11514301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Feb 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a domain wall magnetic tunnel junction device. Integration of input spikes pushes a domain wall within a ferromagnetic track toward a magnetic tunnel junction (MTJ). An energy gradient within the track pushes the domain wall away from the MTJ by leaking accumulated energy from the input spikes. If the integrated input spikes exceed the energy leak of the gradient within a specified time period, the domain wall reaches the MTJ and reverses its resistance, producing an output spike. The leaking energy gradient can be created by a magnetic field, a trapezoidal shape of the ferromagnetic track, or nonuniform material properties in the ferromagnetic track.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.