Patent · US Active

Low defect nuclear transmutation doping in nitride-based semiconductor materials

US11515161B2 · kind B2 · utility

0Cited by
3References
19Claims
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Key dates

Filing dateApr 17, 2020
Grant dateNov 29, 2022
Priority date—
Expiry dateJan 22, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/854
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Doped nitride-based semiconductor materials and methods of producing these materials are described herein.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.