Patent · US Active

Integrated photonic device manufacturing method

US11515164B2 · kind B2 · utility

0Cited by

3References

10Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Karim Hassan · Auxerre, FR
Corrado Sciancalepore · Grenoble, FR
Bertrand Szelag · Grenoble, FR

Key dates

Filing date	Nov 5, 2020
Grant date	Nov 29, 2022
Priority date	—
Expiry date	Nov 5, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10F71/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A photonic device manufacturing method, including a step of transfer, onto a same surface of a photonic circuit previously formed inside and on top of a first substrate, of at least a first die made up of a III-V semiconductor material and of at least a second die made up of silicon nitride, the method further including a step of forming of photonic components in said at least one first and at least one second dies.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.