FinFET transistors as antifuse elements
US11515251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2018 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Nov 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments herein may describe techniques for an integrated circuit including a FinFET transistor to be used as an antifuse element having a path through a fin area to couple a source electrode and a drain electrode after a programming operation is performed. A FinFET transistor may include a source electrode in contact with a source area, a drain electrode in contact with a drain area, a fin area including silicon and between the source area and the drain area, and a gate electrode above the fin area and above the substrate. After a programming operation is performed to apply a programming voltage between the source electrode and the drain electrode to generate a current between the source electrode, the fin area, and the drain electrode, a path may be formed through the fin area to couple the source electrode and the drain electrode. Other embodiments may be described and/or claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.