Heterogeneously integrated semiconductor device and manufacturing method thereof
US11515307B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 4, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Mar 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
Abstract
A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.