Single-layer polysilicon nonvolatile memory cell and memory including the same
US11515315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Nov 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/70
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a single-layer polysilicon nonvolatile memory cell, a group structure thereof and a memory including the same. The memory cell includes a selection transistor and a storage transistor, wherein the selection transistor is connected in series with the storage transistor; and the selection transistor and the storage transistor are arranged on a substrate in a mutually perpendicular manner. A memory cell group includes four memory cells, arranged in a center-symmetrical array of two rows×two columns. The memory comprises at least one memory cell group. The memory cell and the memory thereof are used as a one-time programming memory cell and memory, and have the advantages of small area, high programming efficiency and capability, and strong data retention capability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.