Thin film transistor array substrate for digital X-ray detector device and digital X-ray detector device including the same
US11515354B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Mar 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
Abstract
A thin film transistor array substrate for a digital X-ray detector device includes a p+ type semiconductor layer and a p− type semiconductor layer having different impurity concentrations are disposed above an intrinsic semiconductor layer of the PIN diode and an n+ type semiconductor layer and an n− type semiconductor layer having different impurity concentrations are disposed below the intrinsic semiconductor layer of the PIN diode to minimize ejection of holes by the p− type semiconductor layer and minimize ejection of electros by the n− type semiconductor layer, thereby minimizing occurrence of leakage current of the PIN diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.