Magnetic junction memory device and reading method thereof
US11515357B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 24, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Jan 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.