Gallium nitride power device and manufacturing method thereof
US11515395B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 25, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Sep 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8303
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gallium nitride power device, including: a gallium nitride substrate; cathodes; a plurality of gallium nitride protruding structures arranged on the gallium nitride substrate and between the cathodes, a groove is formed between adjacent gallium nitride protruding structures; an electron transport layer, covering a top portion and side surfaces of each of the gallium nitride protruding structures; a gallium nitride layer, arranged on the electron transport layer and filling each of the grooves; a plurality of second conductivity type regions, where each of the second conductivity type regions extends downward from a top portion of the gallium nitride layer into one of the grooves, and the top portion of each of the gallium nitride protruding structures is higher than a bottom portion of each of the second conductivity type regions; and an anode, arranged on the gallium nitride layer and the second conductivity type regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.