Semiconductor structure and fabrication method thereof

US11515400B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Ruizhi Tang · Longbeilingcun, CN
• Jinyu Fu · Shanghai, CN
• Lin Liu · Gainesville, US
• Bo Li · Qinhuangdao City, CN
• Peng Yang · Beijing, CN
• Haojun Huang · Guizhou, CN
• Jialei Liu · Shanghai, CN

Key dates

• Filing date: Sep 1, 2020
• Grant date: Nov 29, 2022
• Expiry date: Sep 1, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a substrate; forming a dummy gate structure including a dummy gate dielectric layer, an initial dummy gate electrode layer, and a first sidewall spacer; forming an isolation layer having a surface lower than or coplanar with the dummy gate structure; forming a dummy gate electrode layer having a surface lower than the isolation layer, and forming a first opening to expose a portion of the first sidewall spacer; forming a modified sidewall spacer from the exposed first sidewall spacer; forming a second opening by removing the dummy gate electrode layer; forming a third opening by removing the dummy gate dielectric layer and the modified sidewall spacer, where top of the third opening has a size larger than bottom of the third opening; and forming a gate structure in the third opening.