Strained diamond growing and doping method based on chemical vapor deposition (CVD) method

US11519097B1 · kind B1 · utility

Assignee

• Wuhan University · CN

Inventors

• Sheng Liu · Harrison, US
• Wei Shen · Hubei, CN
• Gai Wu · Hubei, CN
• Yuzheng Guo · Hubei, CN
• Kang Liang · Hubei, CN
• Qijun Wang · 流花街道, CN
• Shizhao WANG · Laishui, CN

Key dates

• Filing date: Jun 27, 2022
• Grant date: Dec 6, 2022
• Expiry date: Jun 27, 2042

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/183
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present disclosure relates to a method for growing and doping a strained diamond based on a chemical vapor deposition (CVD) method. The method comprises: depositing a gradient buffer layer and a relaxation layer on a substrate layer in sequence by the CVD method; and finally, depositing a CVD strained diamond layer on the relaxation layer and performing doping by the CVD method. According to the method, a lattice constant of the relaxation layer prepared by utilizing the CVD method is greater than a lattice constant of the diamond, so that a diamond generates a stretching strain. In growing and doping processes, the CVD strained diamond is in a stretching strain state. Therefore, a formation energy of a doped element is low, and it is easy to dope the diamond, so that a doping concentration of the diamond is high.