Optoelectronic device and method of manufacture thereof
US11520112B2 · kind B2 · utility
0Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2020 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Nov 6, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12104
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device. The device comprising: a silicon-on-insulator, SOI, wafer, the SOI wafer including a cavity and an input waveguide, the input waveguide being optically coupled into the cavity; and a mirror, located within the cavity and bonded to a bed thereof, the mirror including a reflector configured to reflect light received from the input waveguide in the SOI wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.