Film for application to three-dimensional sample, method for manufacturing same, and method for transferring fine pattern using same
US11520232B2 · kind B2 · utility
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Key dates
| Filing date | Jan 23, 2018 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | May 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54426
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a film for application to a 3D sample, the film including a photoresist layer that has alignment or direction marks thereon. After the fine pattern of the photoresist layer or coat is exposed, the photoresist layer is applied to a desired position of the 3D sample by aligning the alignment or direction marks of the film with alignment or direction marks on the 3D sample. This allows for transfer of an appropriate fine pattern. Part or all of the thickness or area of the photoresist layer is developed to form projections or depressions in the photoresist layer before the film is applied to the 3D sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.