Variable voltage bit line precharge
US11521673B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2021 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Feb 15, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/419
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes an array of memory cells, a bit line connected to the memory cells, and a power supply voltage input terminal configured to receive a power supply voltage at a first voltage level to operate the memory cells at the first voltage level. A bit line precharge circuit has an input terminal configured to receive the power supply voltage at the first voltage level, and the bit line precharge circuit is configured to precharge the bit lines to a second voltage level lower than the first voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.