Patent · US Active

Three-dimensional beam forming x-ray source

US11521820B2 · kind B2 · utility

1Cited by
72References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 31, 2020
Grant dateDec 6, 2022
Priority date
Expiry dateMar 31, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2235/166
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

X-ray target element is comprised of a planar wafer. The planar wafer element includes a target layer and a substrate layer. The target layer is comprised of an element having a relatively high atomic number and the substrate layer is comprised of diamond. The substrate layer is configured to support the target layer and facilitate transfer of thermal energy away from the target layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.