Patent · US Active

Plasma processing apparatus

US11521836B2 · kind B2 · utility

0Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 9, 2019
Grant dateDec 6, 2022
Priority date
Expiry dateJun 24, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32577
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.