Patent · US Active

Ingan epitaxy layer and preparation method thereof

US11521852B2 · kind B2 · utility

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1References

16Claims

0Family size

Assignee

SOUTH CHINA NORMAL UNIVERSITY · CN

Inventors

Richard Notzel · 流花街道, CN
Peng Wang · Longbeilingcun, CN
Stefano Sanguinetti · Milano, IT
Guofu Zhou · Tangxia, CN

Key dates

Filing date	Dec 19, 2018
Grant date	Dec 6, 2022
Priority date	—
Expiry date	Dec 19, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02502
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Provided are a method for preparing an InGaN-based epitaxial layer on a Si substrate (12), as well as a silicon-based InGaN epitaxial layer prepared by the method. The method may include the steps of: 1) directly growing a first InGaN-based layer (11) on a Si substrate (12); and 2) growing a second InGaN-based layer on the first InGaN-based layer (11).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.