High frequency / high power transition system using SIW structure
US11521944B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 23, 2019 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Dec 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/09618
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a transition system, which includes a monolithic microwave integrated circuit (MMIC) package and a printed-circuit-board (PCB) with a number of PCB vias. The MMIC package has a laminate-based body, which includes a substrate integrated waveguide (SIW) structure with a number of SIW vias, and a MMIC die over the laminate-based body. Herein, the SIW structure faces the PCB and is separate from the PCB with a gap in between. The SIW structure is configured to radiate radio frequency (RF) signals received from the MMIC die to the PCB. An arrangement of the PCB vias is scaling-mirrored to an arrangement of the SIW vias, such that each PCB via and a corresponding SIW via have a same relative position. The arrangement of PCB vias is about aligned with the arrangement of the SIW vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.